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參數(shù)資料
| 型號(hào)： | BLY87C |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-120A, 4 PIN |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大小： | 79K |
| 代理商： | BLY87C |
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLY87C
Fig.9
Typical values; f = 175 MHz;
V
CE
= 13,5 V;
V
CE
= 12,5 V.
handbook, halfpage
0
0
0.5
1.5
5
10
MGP826
1
PL
(W)
PS (W)
Th = 25
°
C
Th = 70
°
C
Fig.10 Typical values; f = 175 MHz;
V
CE
= 13,5 V;
V
CE
= 12,5 V.
handbook, halfpage
2.5
12.5
10
0
20
MGP827
6.5
4.5
8.5
10.5
Gp
(dB)
80
40
20
60
η
(%)
PL (W)
Th = 25
°
C
Th = 25
°
C
70
°
C
70
°
C
η
Gp
Fig.11 R.F. SOAR (short-time operation during
mismatch); f = 175 MHz; T
h
= 70
°
C;
R
th mb-h
= 0,45 K/W;
V
CEnom
= 13,5 V or 12,5 V; P
S
= P
Snom
at
V
CEnom
and VSWR = 1.
handbook, halfpage
1
1.1
1.3
7
MGP828
1.2
10
20
50
8
PLnom
(W)
VSWR = 1
9
VCE
VCEnom
6
VSWR =
PS
PSnom
Note to Fig.11:
The transistor has been developed for use with
unstabilized supply voltages. As the output power and
drive power increase with the supply voltage, the nominal
output power must be derated in accordance with the
graph for safe operation at supply voltages other than the
nominal. The graph shows the permissible output power
under nominal conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
S
/P
Snom
) increases linearly with supply over-voltage
ratio.
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| BLY88C | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:VHF power transistor |
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