參數(shù)資料
型號: BLX94C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
文件頁數(shù): 2/11頁
文件大小: 62K
代理商: BLX94C
1996 Feb 06
2
Philips Semiconductors
Product specification
UHF power transistor
BLX94C
FEATURES
Withstands full load mismatch
Emitter ballasting resistors for an optimum temperature
profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Transmitting applications in the UHF range with a
nominal supply voltage up to 28 V.
DESCRIPTION
NPN silicon planar epitaxial transistor primarily intended
for class-A, B or C operation. The transistor is
encapsulated in a 4-lead SOT122A stud envelope with a
ceramic cap.
PINNING - SOT122A
PIN
SYMBOL
DESCRIPTION
1
2
3
4
c
e
b
e
collector
emitter
base
emitter
Fig.1 Simplified outline and symbol.
handbook, halfpage
2
3
1
4
MAM229
e
c
b
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
MODE OF
OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
η
C
(%)
CW, class-B
470
28
25
>6.5
>55
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
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