
1997 Oct 27
2
Philips Semiconductors
Product specification
UHF push-pull power transistor
BLV950
FEATURES
Internal input and output matching for easy matching,
high gain and efficiency
Poly-silicon emitter ballasting resistors for an optimum
temperature profile
Gold metallization ensures excellent reliability.
APPLICATIONS
Base station transmitters in the 800 to 960 MHz range.
DESCRIPTION
Two NPN silicon planar epitaxial transistors in push-pull
configuration, intended for linear common emitter
class-AB operation. The transistors are encapsulated in a
4-lead SOT262A2 flange package with 2 ceramic caps.
The flange provides the common emitter connection for
both transistors.
PINNING - SOT262A2
PIN
SYMBOL
DESCRIPTION
1
2
3
4
5
c1
c2
b1
b2
e
collector 1
collector 2
base 1
base 2
common emitter; connected
to flange
Fig.1 Simplified outline and symbol.
handbook, halfpage
MAM031
c1
b1
b2
c2
e
1
2
3
4
Top view
5
5
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter push-pull test circuit.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
≥
8
≥
7.5
≥
8.5
≥
8
η
C
(%)
≥
45
≥
45
≥
35
≥
35
d
3
(dBc)
≤
30
≤
30
CW, class-AB
900
960
900
960
26
26
26
26
150
150
2-tone, class-AB
150 (PEP)
150 (PEP)
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.