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參數(shù)資料
| 型號(hào)： | BLV946 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-273A, 6 PIN |
| 文件頁(yè)數(shù)： | 5/12頁(yè) |
| 文件大小： | 107K |
| 代理商： | BLV946 |
1997 Oct 30
5
Philips Semiconductors
Product specification
UHF power transistor
BLV946
APPLICATION INFORMATION
RF performance at T
h
= 25
°
C in a common emitter, class-AB test circuit; R
th mb-h
= 0.3 K/W.
Ruggedness in class-AB operation
The BLV946 is capable of withstanding a load mismatch corresponding to VSWR = 5 : 1 through all phases at rated
output power, under the following conditions: V
CE
= 26 V; f = 960 MHz; I
CQ
= 130 mA; T
h
= 25
°
C; R
th mb-h
= 0.3 K/W.
MODE OF OPERATION
f
(MHz)
V
CE
(V)
I
CQ
(mA)
P
L
(W)
G
p
(dB)
≥
9
typ. 11
η
C
(%)
≥
55
typ. 60
CW, class-AB
960
26
130
40
Fig.5
Power gain and efficiency as functions of
load power; typical values.
V
CE
= 26 V.
I
CQ
= 130 mA.
f = 960 MHz.
handbook, halfpage
Gp
(dB)
0
20
40
60
0
MLD234
8
PL
80
40
60
20
0
4
12
η
(%)
η
Gp
Fig.6
Load power as a function of input power;
typical values.
V
CE
= 26 V.
I
CQ
= 130 mA.
f = 960 MHz.
handbook, halfpage
0
2
4
10
6
8
20
0
40
MLD235
PL
(W)
Pi
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