參數(shù)資料
型號: BLV90
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80%
中文描述: UHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC, SOT-172D, 4 PIN
文件頁數(shù): 4/10頁
文件大?。?/td> 54K
代理商: BLV90
February 1996
4
Philips Semiconductors
Product specification
UHF power transistor
BLV90
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified
Collector-base breakdown voltage
open emitter; I
C
= 2.5 mA
Collector-emitter breakdown voltage
open base; I
C
= 10 mA
Emitter-base breakdown voltage
open collector; I
E
= 0.5 mA
Collector cut-off current
V
BE
= 0; V
CE
= 16 V
Second breakdown energy
L = 25 mH; f = 50 Hz; R
BE
= 10
D.C. current gain
I
C
= 0.15 A; V
CE
= 10 V
Collector capacitance at f = 1 MHz
I
E
= i
e
= 0; V
CB
= 12.5 V
Feedback capacitance at f = 1 MHz
I
C
= 0; V
CE
= 12.5 V
Collector-mounting base capacitance
V
(BR)CBO
>
36 V
V
(BR)CEO
>
16 V
V
(BR)EBO
>
3 V
I
CES
<
1 mA
E
SBR
>
0.3 mJ
h
FE
>
25
C
c
typ.
1.8 pF
C
re
C
c-mb
typ.
typ.
1.0 pF
0.5 pF
Fig.3 T
j
= 25
°
C; typical values.
handbook, halfpage
0
80
40
0
150
IC (mA)
hFE
300
600
450
MDA390
VCE =
12.5 V
10 V
Fig.4 I
E
= i
e
= 0; f = 1 MHz; typical values.
handbook, halfpage
Cc
(pF)
0
4
8
VCB (V)
16
3
1
0
2
12
MDA391
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