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參數(shù)資料
| 型號： | BLV862 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF linear push-pull power transistor |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | BLV862 |
1999 Jun 25
9
Philips Semiconductors
Product specification
UHF linear push-pull power transistor
BLV862
Fig.10 Input impedance (per section) as function of
frequency (series components);
typical values.
T
h
= 25
°
C; V
CE
= 28 V; I
CQ
= 0.8 A; P
L
= 150 W (total device).
handbook, halfpage
(
)
400
500
900
2
0
1
1
3
600
700
800
MGG814
f (MHz)
xi
ri
Fig.11 Load impedance (per section) as function of
frequency (series components);
typical values.
T
h
= 25
°
C; V
CE
= 28 V; I
CQ
= 0.8 A; P
L
= 150 W (total device).
handbook, halfpage
ZL
(
)
400
500
900
2
0
1
1
600
700
800
MGG815
f (MHz)
RL
XL
Fig.12 Power gain as a function of frequency;
typical values.
T
h
= 25
°
C; V
CE
= 28 V; I
CQ
= 0.8 A; P
L
= 150 W (total device).
handbook, halfpage
Gp
(dB)
400
500
900
12
4
0
8
600
700
800
MGG816
f (MHz)
Fig.13 Definition of transistor impedance.
handbook, halfpage
MBA451
Zi
ZL
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