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參數(shù)資料
| 型號(hào)： | BLV21 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁(yè)數(shù)： | 6/11頁(yè) |
| 文件大?。?/td> | 80K |
| 代理商： | BLV21 |
August 1986
6
Philips Semiconductors
Product specification
VHF power transistor
BLV21
APPLICATION INFORMATION
R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit) T
h
= 25
°
C
List of components:
f (MHz)
V
CE
(V)
28
P
L
(W)
15
P
S
(W)
<
1,5
G
P
(dB)
>
10
I
C
(A)
<
0,83
η
(%)
>
65
z
i
(
)
1,4
+
j1,85
Y
L
(mS)
33
j27,5
175
C1
C2
C3
C4
C5
L1
L2
L3
L4
L6
L7
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric,
thickness 1/16".
R1
=
R2 = 10
carbon resistor
Component layout and printed-circuit board for 175 MHz test circuit see Fig.8.
=
=
=
=
=
=
=
=
=
=
=
C7 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004)
C6 = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011)
27 pF ceramic capacitor (500 V)
120 pF ceramic capacitor (500 V)
100 nF polyester capacitor
1 turn Cu wire (1,6 mm); int. dia. 8,4 mm; leads 2
×
5 mm
7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2
×
5 mm
L8 = Ferroxcube wide band h.f. choke, grade 3B (cat. no. 4312 020 36640)
L5 = strip (12 mm
×
6 mm); tap for C3 at 5 mm from transistor
3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 9,0 mm; leads 2
×
5 mm
3 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 8,2 mm; leads 2
×
5 mm
Fig.7 Test circuit; c.w. class-B.
handbook, full pagewidth
MGP253
50
50
C1
L1
L3
R1
L2
L6
L5
L7
L4
C2
C3
T.U.T.
C4
C5
+
VCC
C6
C7
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