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參數(shù)資料
| 型號： | BLV12 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁數(shù)： | 2/11頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BLV12 |
September 1991
2
Philips Semiconductors
Product specification
VHF power transistor
BLV12
FEATURES
Emitter-ballasting resistors for an
optimum temperature profile
Excellent reliability
Withstands full load mismatch.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 4-lead SOT123
flange envelope with a ceramic cap. It
is designed for common emitter,
class-B operation in mobile VHF
transmitters with a supply voltage of
12.5 V. All leads are isolated from the
mounting flange.
PINNING - SOT123
PIN
DESCRIPTION
1
2
3
4
collector
emitter
base
emitter
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C in a common emitter test circuit.
PIN CONFIGURATION
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
P
(dB)
>
9
η
C
(%)
>
60
c.w. class-B
175
12.5
30
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
halfpage
1
2
3
4
MSB057
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