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參數(shù)資料
| 型號(hào)： | BLV11 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | VHF power transistor |
| 中文描述： | VHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-123A, 4 PIN |
| 文件頁(yè)數(shù)： | 8/11頁(yè) |
| 文件大?。?/td> | 81K |
| 代理商： | BLV11 |
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV11
Fig.9 Typical values; f = 175 MHz;
V
CE
= 13,5 V;
V
CE
= 12,5 V.
handbook, halfpage
PL
(W)
0
2.5
5
7.5
20
10
5
15
MGP266
PS (W)
Th = 25
°
C
70
°
C
Fig.10 Typical values; f = 175 MHz.
V
CE
= 13,5 V;
V
CE
= 12,5 V.
handbook, halfpage
Gp
(dB)
5
10
15
20
7.5
2.5
0
5
MGP267
0
50
100
η
(%)
PL (W)
Th = 25
°
C
Th = 25
°
C
70
°
C
70
°
C
η
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; T
h
= 70
°
C;
R
th mb-h
= 0,3 K/W; V
CEnom
= 13,5 V or 12,5 V; P
S
= P
Snom
at V
CEnom
and VSWR = 1.
The transistor has been developed for use with
unstabilized supply voltages. As the output power
and drive power increase with the supply voltage,
the nominal output power must be derated in
accordance with the graph for safe operation at
supply voltages other than the nominal. The graph
shows the permissible output power under
nominal conditions (VSWR = 1), as a function of
the expected supply over-voltage ratio with VSWR
as parameter.
The graph applies to the situation in which the
drive (P
/P
) increases linearly with supply
over-voltage ratio.
handbook, halfpage
(W)
(VSWR = 1)
1
1.1
1.2
1.3
12
16
15
14
13
MGP268
VCE
VCEnom
PS
PSnom
VSWR =
4.5
5
10
20
50
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| BLV12 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:VHF power transistor |
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