參數(shù)資料
型號: BLV10
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: VHF power transistor
中文描述: VHF BAND, Si, NPN, RF POWER TRANSISTOR
封裝: CERAMIC PACKAGE-4
文件頁數(shù): 8/11頁
文件大小: 81K
代理商: BLV10
August 1986
8
Philips Semiconductors
Product specification
VHF power transistor
BLV10
Fig.9 Typical values; f = 175 MHz;
handbook, halfpage
0
1
2
0
5
10
MGP255
PL
(W)
PS (W)
70
°
C
Th = 25
°
C
V
CE
= 13,5 V;
V
CE
= 12,5 V.
Fig.10 Typical values; f = 175 MHz;
handbook, halfpage
0
5
10
20
0
5
10
150
0
50
100
15
MGP256
Gp
(dB)
PL (W)
Th = 70
°
C
25
°
C
25
°
C
70
°
C
η
η
(%)
V
CE
= 13,5 V;
V
CE
= 12,5 V.
Fig.11 R.F. SOAR (short-time operation during mismatch); f = 175 MHz; T
h
= 70
°
C; R
th mb-h
= 0,3 K/W;
V
CEnom
= 13,5 V or 12,5 V; P
S
= P
Snom
at V
CEnom
and VSWR = 1.
The transistor has been developed for use with
unstabilized supply voltages. As the output power
and drive power increase with the supply voltage,
the nominal output power must be derated in
accordance with the graph for safe operation at
supply voltages other than the nominal. The graph
shows the permissible output power under nominal
conditions (VSWR = 1), as a function of the
expected supply over-voltage ratio with VSWR as
parameter.
The graph applies to the situation in which the drive
(P
/P
) increases linearly with supply
over-voltage ratio.
handbook, halfpage
(W)
(VSWR = 1)
0
1.1
1.2
1.3
7.5
2.5
0
5
MGP257
50
10
VCE
VCEnom
PS
PSnom
VSWR =
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