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參數(shù)資料
| 型號(hào)： | BLV103 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | UHF power transistor |
| 中文描述： | UHF BAND, Si, NPN, RF POWER TRANSISTOR |
| 封裝： | CERAMIC, SOT-171A, 6 PIN |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | BLV103 |
March 1993
2
Philips Semiconductors
Product specification
UHF power transistor
BLV103
FEATURES
Internal matching for an optimum
wideband capability and high gain
Emitter-ballasting resistors for
optimum temperature profile
Gold metallization ensures
excellent reliability.
DESCRIPTION
NPN silicon planar epitaxial transistor
encapsulated in a 6-lead SOT171
flange envelope with a ceramic cap. It
is intended for common emitter,
class-AB operation in cellular radio
base stations in the 960 MHz
frequency band. All leads are isolated
from the mounting base.
PINNING - SOT171
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common emitter test circuit.
PIN CONFIGURATION
MODE OF OPERATION
f
(MHz)
V
CE
(V)
P
L
(W)
G
p
(dB)
>
11.5
η
C
(%)
c.w. class-AB
960
24
4
>
45
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided
that the BeO disc is not damaged. All persons who handle, use or dispose of
this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to
the regulations applying at the location of the user. It must never be thrown
out with the general or domestic waste.
handbook, halfpage
e
c
b
MBB012
Fig.1 Simplified outline and symbol.
k, halfpage
MBA931 - 1
1
3
5
2
4
6
Top view
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