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參數(shù)資料
| 型號： | BLU30 |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BLU30 |
January 1985
2
Philips Semiconductors
Product specification
UHF power transistor
BLU30/12
DESCRIPTION
N-P-N silicon planar epitaxial
transistor primarily intended for use in
mobile radio transmitters in the
470 MHz communications band.
FEATURES:
multi-base structure and
emitter-ballasting resistors for an
optimum temperature profile
gold metallization ensures
excellent reliability
internal matching to achieve an
optimum wideband capability and
high power gain
The transistor has a 6-lead flange
envelope with a ceramic cap
(SOT-119). All leads are isolated from
the flange.
QUICK REFERENCE DATA
Envelope
Mode of operation
Collector-emitter voltage (d.c.)
Frequency
Load power
Power gain
Collector efficiency
Heatsink temperature
SOT-119
class-B; c.w.
V
CE
f
P
L
G
P
η
C
T
h
12,5 V
470 MHz
30 W
6,0 dB
55 %
25
°
C
>
>
PIN CONFIGURATION
Fig.1 Simplified outline, SOT119A.
handbook, halfpage
2
4
6
5
3
1
MSB006
PINNING
PIN
DESCRIPTION
1
2
3
4
5
6
emitter
emitter
base
collector
emitter
emitter
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
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