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參數(shù)資料
| 型號： | BLU12 |
| 英文描述： | UHF power transistor |
| 中文描述： | 超高頻大功率晶體管 |
| 文件頁數(shù)： | 3/10頁 |
| 文件大小： | 69K |
| 代理商： | BLU12 |
January 1985
3
Philips Semiconductors
Product specification
UHF power transistor
BLU30/12
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-base voltage (open emitter)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
d.c. or average
(peak value); f
>
1 MHz
Total power dissipation
f
>
1 MHz; T
mb
= 25
°
C
Storage temperature
Operating junction temperature
V
CBOM
V
CEO
V
EBO
max.
max.
max.
36 V
16,5 V
4 V
I
C
I
CM
max.
max.
6 A
18 A
P
tot
(r.f.)
T
stg
T
j
max.
65 to
+
150
°
C
max.
65 W
200
°
C
Fig.2 D.C. SOAR. R
th mb-h
= 0,2 K/W
handbook, halfpage
1
10
1
MDA324
1
10
VCE (V)
IC
(A)
10
2
Th = 70
°
C
Tmb = 25
°
C
Fig.3 Power/temperature derating curves
I
II Short-time operation during mismatch; (f > 1 MHz.
Continuous operation (f > 1 MHz)
handbook, halfpage
(W)
0
40
80
Th (
°
C)
160
0
80
120
60
40
20
MDA325
II
I
THERMAL RESISTANCE
(dissipation = 45 W; T
mb
= 25
°
C)
From junction to mounting base
(r.f. dissipation)
From mounting base to heatsink
R
th j-mb(r.f.)
R
th mb-h
max.
max.
2,45 K/W
0,2 K/W
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