參數(shù)資料
型號(hào): BLT71
廠商: NXP SEMICONDUCTORS
元件分類: 小信號(hào)晶體管
英文描述: UHF power transistor
中文描述: UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
封裝: SOT-223, 4 PIN
文件頁(yè)數(shù): 3/12頁(yè)
文件大?。?/td> 107K
代理商: BLT71
1997 Oct 14
3
Philips Semiconductors
Product specification
UHF power transistor
BLT71/8
THERMAL CHARACTERISTICS
Note
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
R
th j-s
thermal resistance from junction to
soldering point
P
dis
= 2.9 W; T
s
= 60
°
C; note 1
40
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CES
h
FE
C
c
C
re
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector leakage current
DC current gain
collector capacitance
feedback capacitance
open emitter; I
C
= 0.5 mA
open base; I
C
= 10 mA
open collector; I
E
= 0.1 mA
V
CE
= 8 V; V
BE
= 0
V
CE
= 5 V; I
C
= 100 mA
V
CB
= 4.8 V; I
E
= i
e
= 0; f = 1 MHz
V
CE
= 4.8 V; I
C
= 0; f = 1 MHz
16
8
2.5
25
0.1
7
5
V
V
V
mA
pF
pF
Fig.2
DC SOAR.
T
s
= 115
°
C.
handbook, halfpage
10
1
MBK263
10
1
1
10
IC
(A)
VCE (V)
10
2
(1)
Fig.3
DC current gain as a function of collector
current; typical values.
V
CE
= 4.8 V.
Measured under pulse conditions: t
p
300
μ
s;
δ ≤
0.001.
handbook, halfpage
0
100
50
0
200
400
600
800
hFE
IC (mA)
MLD131
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