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參數(shù)資料
| 型號(hào)： | BLF547 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | SOT-262A2, 4 PIN |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | BLF547 |
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF547
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
±
V
GS
I
D
P
tot
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
65
20
9
225
V
V
A
W
up to T
mb
= 25
°
C; total device;
both sections equally loaded
T
stg
T
i
storage temperature
junction temperature
65
150
200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
R
th j-mb
thermal resistance from junction to
mounting base
T
mb
= 25
°
C; P
tot
= 225 W
total device; both sections equally
loaded
total device; both sections equally
loaded
max. 0.78 K/W
R
th mb-h
thermal resistance from mounting
base to heatsink
max. 0.15 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
°
C;
Total device; both sections equally loaded.
handbook, halfpage
1
10
1
10
MRA996
10
2
2
(1)
ID
(A)
VDS (V)
(2)
Fig.3 Power/temperature derating curves.
(1) Continuous operation.
(2) Short-time operation during mismatch.
Total device; both sections equally loaded.
handbook, halfpage
Ptot
(W)
0
50
100
150
200
0
20
(2)
(1)
40
60
80
100
120
MRB027
Th (
o
C)
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