參數(shù)資料
型號(hào): BLF545
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF push-pull power MOS transistor
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-268A, 4 PIN
文件頁數(shù): 5/12頁
文件大?。?/td> 94K
代理商: BLF545
October 1992
5
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF545
Fig.6
Drain-source on-state resistance as a
function of junction temperature, typical
values per section.
I
D
= 1.2 A; V
GS
= 10 V.
handbook, halfpage
RDSon
(
)
1.6
0
50
100
150
0
1.2
0.8
0.4
MDA506
Tj (
°
C)
Fig.7
Input and output capacitance as functions
of drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
(pF)
0
10
VDS (V)
20
30
0
80
60
40
20
MDA507
Cis
Cos
Fig.8
Feedback capacitance as a function of
drain-source voltage, typical values per
section.
V
GS
= 0; f = 1 MHz.
handbook, halfpage
Crs
(pF)
0
10
20
30
30
10
0
20
MDA508
VDS (V)
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