參數(shù)資料
型號: BLF544B
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF push-pull power MOS transistor
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: SOT-268A, 4 PIN
文件頁數(shù): 3/12頁
文件大小: 75K
代理商: BLF544B
October 1992
3
Philips Semiconductors
Product specification
UHF push-pull power MOS transistor
BLF544B
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Per transistor section unless otherwise specified.
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
±
V
GS
I
D
P
tot
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
65
20
2
48
V
V
A
W
up to T
mb
= 25
°
C; total device;
both sections equally loaded
T
stg
T
j
storage temperature
junction temperature
65
150
200
°
C
°
C
SYMBOL
PARAMETER
CONDITIONS
THERMAL
RESISTANCE
R
th j-mb
thermal resistance from junction to
mounting base
thermal resistance from mounting
base to heatsink
total device; both sections equally
loaded
total device; both sections equally
loaded
3.7 K/W
R
th mb-h
0.25 K/W
Fig.2 DC SOAR.
(1) Current in this area may be limited by R
DS(on)
.
(2) T
mb
= 25
°
C.
Total device; both sections equally loaded.
handbook, halfpage
1
1
10
MRA993
10
1
10
2
(1)
ID
(A)
VDS (V)
(2)
Fig.3 Power/temperature derating curves.
(1) Short-time operation during mismatch.
(2) Continuous operation.
Total device; both sections equally loaded.
handbook, halfpage
Ptot
(W)
0
(1)
(2)
40
80
160
60
20
0
40
120
MDA515
Th (
°
C)
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