參數(shù)資料
型號: BLF2022-40
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
文件頁數(shù): 2/6頁
文件大?。?/td> 88K
代理商: BLF2022-40
2001 April 05
2
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF2022-40
FEATURES
High power gain
Easy power control
Excellent ruggedness
Designed for broadband operation (2.0 to 2.2 GHz)
Internal input and output matching for high gain and
efficiency
Improved linearity at backoff levels.
APPLICATIONS
Common source class-AB operation for PCN and PCS
applications in the 2000 to 2200 MHz frequency range
Suitable for GSM, Edge, CDMA and WCDMA
applications.
DESCRIPTION
Silicon N-channel enhancement mode lateral D-MOS
transistors encapsulated in a 2-lead SOT608A flange
package with a ceramic cap. The common source is
connected to the mounting flange.
PINNING
PIN
DESCRIPTION
1
2
3
drain
gate
source, connected to flange
Top view
2
1
3
MBL290
Fig.1 Simplified outline SOT608A.
QUICK REFERENCE DATA
RF performance at T
h
= 25
°
C in a common source test circuit.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
DS
(V)
P
L
(W)
G
p
(dB)
η
D
(%)
d
im
(dBc)
Two-tone, class-AB
f
1
= 2170; f
2
= 2170.1
28
40 (PEP)
>10.5
>30
25
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
DS
V
GS
I
D
T
stg
T
j
drain-source voltage
gate-source voltage
DC drain current
storage temperature
junction temperature
65
65
±
15
5
+
150
200
V
V
A
°
C
°
C
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