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參數(shù)資料
| 型號： | BLF2022-30 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | CERAMIC PACKGE-2 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 105K |
| 代理商： | BLF2022-30 |
2003 Feb 24
5
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF2022-30
handbook, halfpage
Gp
(dB)
Gp
η
D
(%)
η
D
10
5
0
30
10
0
20
MLD940
0
4
2
6
8
10
PL (AV) (W)
Fig.6
Powergainanddrainefficiencyasfunctions
of average load power; typical values.
Two-carrier W-CDMA performance.
V
DS
= 28 V; I
DQ
= 270 mA; T
h
≤
25
°
C; f
1
= 2170 MHz.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
handbook, halfpage
dim
(dBc)
ACLR
(dBc)
0
4
2
6
8
10
20
60
40
0
20
60
40
MLD941
ACLR
dim
PL (AV) (W)
Fig.7
Intermodulation distortion and adjacent
channel leakage ratio (ACLR) as functions
of average load power; typical values.
Two-carrier W-CDMA performance.
V
DS
= 28 V; I
= 270 mA; T
h
≤
25
°
C; f
1
= 2155 MHz;
f
1
= 2165 MHz;.
Input signal: 3GPP W-CDMA 64 channels with 66% clipping;
peak to average power ratio: 8.5 dB at 0.01% probability on CCDF;
channel spacing/bandwidth = 5 MHz / 3.84 MHz.
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