參數(shù)資料
型號: BLF1820-70
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: UHF power LDMOS transistor
中文描述: UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, FM-2
文件頁數(shù): 7/12頁
文件大?。?/td> 104K
代理商: BLF1820-70
2003 Feb 10
7
Philips Semiconductors
Product specification
UHF power LDMOS transistor
BLF1820-70
handbook, full pagewidth
INPUT
PH990118
OUTPUT
PH990117
MGU319
VDD
VGS
C5
C6
C7
C8
C9
C10
C12
C13
C11
C14
C15
C16
C17
F1
R2
R1
C4
C3
C1
C2
INPUT
PH990118
OUTPUT
PH990117
50
95
50
Fig.9 Component layout for 2 GHz class-AB test circuit.
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
ε
r
= 2.2), thickness 0.79 mm.
The other side is unetched and serves as a ground plane.
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BLF1820-70,112 制造商:NXP Semiconductors 功能描述:
BLF1820-70,135 制造商:NXP Semiconductors 功能描述:
BLF1820-90 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF1820-90,112 功能描述:射頻MOSFET電源晶體管 BULK TNS-RFPR RoHS:否 制造商:Freescale Semiconductor 配置:Single 晶體管極性: 頻率:1800 MHz to 2000 MHz 增益:27 dB 輸出功率:100 W 汲極/源極擊穿電壓: 漏極連續(xù)電流: 閘/源擊穿電壓: 最大工作溫度: 封裝 / 箱體:NI-780-4 封裝:Tray
BLF1820-90,135 制造商:NXP Semiconductors 功能描述: