參數(shù)資料
型號(hào)： BLC6G22-100
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： UHF power LDMOS transistor
中文描述： S BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝： PLASTIC, SOT-895-1, 2 PIN
文件頁(yè)數(shù)： 3/9頁(yè)
文件大小： 52K
代理商： BLC6G22-100
BLC6G22-100_6G22LS-100_1
Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Objective data sheet
Rev. 01 — 30 January 2006
3 of 9
Philips Semiconductors
BLC6G22-100; BLC6G22LS-100
UHF power LDMOS transistor
5.
Thermal characteristics
6.
Characteristics
7.
Application information
7.1 Ruggedness in class-AB operation
The BLC6G22-100 and BLC6G22LS-100 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 28 V; I
Dq
= 950 mA; P
L
= 100 W (CW); f = 2170 MHz.
Table 5:
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance
from junction to case
Conditions
T
case
= 80
°
C;
P
L
= 25 W
Type
BLC6G22-100
BLC6G22LS-100
Min
<tbd> <tbd> <tbd>
K/W
<tbd>
0.45
Typ
Max
Unit
0.54
K/W
Table 6:
T
j
= 25
°
C unless otherwise specified
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
gate-source threshold voltage
V
GSq
gate-source quiescent voltage
I
DSS
drain leakage current
I
DSX
drain cut-off current
Characteristics
Conditions
V
GS
= 0 V; I
D
= 0.5 mA
Min
65
Typ
-
Max
-
Unit
V
V
DS
= 10 V; I
D
= 150 mA
V
DS
= 28 V; I
D
= 950 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 13 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.5 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 5.25 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
<tbd>
2
<tbd> <tbd> <tbd>
V
-
-
23
27
<tbd>
V
5
-
μ
A
A
I
GSS
g
fs
R
DS(on)
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
-
-
-
-
10.5
0.1
450
-
-
nA
S
C
rs
-
<tbd>
-
pF
Table 7:
Mode of operation: 2-carrier W-CDMA; PAR 7 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 2112.5 MHz; f
2
= 2122.5 MHz; f
3
= 2157.5 MHz; f
4
= 2167.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 950 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit
Symbol Parameter
P
L(AV)
average output power
G
p
power gain
IRL
input return loss
η
D
drain efficiency
IMD3
third order intermodulation distortion
ACPR
adjacent channel power ratio
Application information
Conditions
Min
-
<tbd>
18
-
<tbd>
32
-
-
Typ
25
Max
-
-
<tbd>
dB
-
<tbd>
dBc
<tbd>
dBc
Unit
W
dB
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
P
L(AV)
= 25 W
9
%
37
40
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