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參數資料
| 型號： | BLC6G20LS-140 |
| 廠商： | Analog Devices, Inc. |
| 英文描述： | UHF power LDMOS transistor |
| 中文描述： | UHF大功率LDMOS晶體管 |
| 文件頁數： | 1/9頁 |
| 文件大?。?/td> | 52K |
| 代理商： | BLC6G20LS-140 |
1.
Product profile
1.1 General description
140 W LDMOS power transistor for base station applications at frequencies from
1800 MHz to 2000 MHz.
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 10 MHz.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 1930 MHz and 1990 MHz, a
supply voltage of 28 V and an I
Dq
of 1000 mA:
N
Average output power = 35.5 W
N
Power gain = 16.5 dB (typ)
N
Efficiency = 31 %
N
IMD3 =
37 dBc
N
ACPR =
40 dBc
I
Easy power control
I
Integrated ESD protection
I
Excellent ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (1800 MHz to 2000 MHz)
I
Internally matched for ease of use
BLC6G20-140; BLC6G20LS-140
UHF power LDMOS transistor
Rev. 01 — 30 January 2006
Objective data sheet
Table 1:
RF performance at T
case
= 25
°
C in a common source class-AB production test circuit.
Mode of operation
f
V
DS
(MHz)
(V)
2-carrier W-CDMA
1930 to 1990
28
Typical performance
P
L(AV)
(W)
35.5
G
p
(dB)
16.5
η
D
(%)
31
IMD3
(dBc)
37
[1]
ACPR
(dBc)
40
[1]
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
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