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參數(shù)資料
| 型號： | BIC801M |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 6V V(BR)DSS | 20MA I(D) | SOT-143VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 6V的五（巴西）直| 20mA的一（d）|的SOT - 143VAR |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 70K |
| 代理商： | BIC801M |
BIC801M
2
Absolute Maximum Ratings
(Ta = 25
°
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DS
V
G1S
6
V
Gate1 to source voltage
+6
– 0
V
Gate2 to source voltage
V
G2S
+6
– 0
V
Drain current
I
D
Pch
20
mA
Channel power dissipation
150
mW
Channel temperature
Tch
150
°
C
°
C
Storage temperature
Tstg
–55 to +150
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
6
—
—
V
I
D
= 200
μ
A
V
G2S
= 0,V
G1
= open
I
G1
= +10
μ
A
V
G2S
= V
DS
= 0
I
G2
= +10
μ
A
V
G1S
= V
DS
= 0
V
G1S
= +5V
V
G2S
= V
DS
= 0
V
G2S
= +5V
V
G1S
= V
DS
= 0
V
DS
= 5V, I
D
= 100
μ
A
V
G1
= open
V
DS
= 5V , V
G2S
= 4V
V
G1
= open
V
DS
= 5V, I
= 10mA
V
G2S
=4V, f = 1kHz
V
DS
= 5V, V
G2S
=4V
V
G1
= open
f = 1MHz
Gate1 to source breakdown
voltage
V
(BR)G1SS
+6
—
—
V
Gate2 to source breakdown
voltage
V
(BR)G2SS
+6
—
—
V
Gate1 to source cutoff current I
G1SS
—
—
+100
nA
Gate2 to source cutoff current I
G2SS
—
—
+100
nA
Gate2 to source cutoff voltage V
G2S(off)
0.5
0.7
1.0
V
Drain current
I
DS(op)
7
10
13
mA
Forward transfer admittance
|y
fs
|
22
27
32
mS
Input capacitance
c
iss
c
oss
1.6
2.0
2.3
pF
Output capacitance
0.6
1.0
1.4
pF
Reverse transfer capacitance c
rss
Power gain
—
0.024
0.05
pF
PG1
23
27
—
dB
V
DS
= 5V, V
G2S
=4V
V
G1
= open
f = 200MHz
Noise figure
NF1
—
1.1
1.6
dB
Power gain
PG2
17
21.5
—
dB
V
DS
= 5V, V
G2S
=4V
V
G1
= open
f = 900MHz
Noise figure
NF2
—
1.75
2.3
dB
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