參數(shù)資料
型號(hào)： BGY80
廠商： NXP SEMICONDUCTORS
元件分類： 衰減器
英文描述： CATV amplifier modules
中文描述： 40 MHz - 450 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： SOT115J, 9 PIN
文件頁(yè)數(shù)： 3/3頁(yè)
文件大小： 14K
代理商： BGY80
February 1995
3
Philips Semiconductors
Product specification
CATV amplifier modules
BGY80; BGY81
CHARACTERISTICS
Bandwidth 40 to 450 MHz; V
B
= 24 V; T
mb
= 30
°
C; Z
S
= Z
L
= 75
.
Notes
1.
2.
f
p
= 55.25 MHz; V
p
= 46 dBmV; f
q
= 391.25 MHz; V
q
= 46 dBmV; measured at f
p
+ f
q
= 446.5 MHz.
Measured according to DIN45004B: f
p
= 440.25 MHz; V
p
= V
o
; f
q
= 447.25 MHz; V
q
= V
o
6 dB; f
r
= 449.25 MHz;
V
r
= V
o
6 dB; measured at f
p
+ f
q
f
r
= 438.25 MHz.
The modules normally operate at V
B
= 24 V, but are able to withstand supply transients up to 30 V.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 450 MHz
f = 40 to 450 MHz
f = 40 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 450 MHz
f = 50 MHz
60 channels flat;
V
o
= 46 dBmV;
measured at 445.25 MHz
12
12.5
0.2
20
19
18
20
19
18
45
13
14
1.5
±
0.2
+45
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
SL
FL
S
11
slope cable equivalent
flatness of frequency response
input return losses
S
22
output return losses
S
21
CTB
phase response
composite triple beat
BGY80
BGY81
cross modulation
BGY80
BGY81
composite second order distortion
BGY80
BGY81
second order distortion
BGY80
BGY81
output voltage
BGY80
BGY81
noise figure
BGY80
BGY81
total current consumption (DC)
BGY80
BGY81
54
58
dB
dB
X
mod
60 channels flat;
V
o
= 46 dBmV;
measured at 55.25 MHz
59
62
dB
dB
CSO
60 channels flat;
V
o
= 46 dBmV;
measured at 446.5 MHz
58
61
dB
dB
d
2
note 1
72
74
dB
dB
V
o
d
im
=
60 dB; note 2
61.5
64
dBmV
dBmV
F
f = 450 MHz
7.5
8
dB
dB
I
tot
note 3
180
220
200
240
mA
mA
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