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參數(shù)資料
| 型號： | BGY785AD |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 衰減器 |
| 英文描述： | Safety Sign; Legend:Notice Hearing Protection Must Be Worn in This Area; External Height:10"; External Width:14"; Body Material:Aluminum; Color:Blue/Black RoHS Compliant: NA |
| 中文描述： | 40 MHz - 750 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | SOT115J, 9 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 66K |
| 代理商： | BGY785AD |
1997 Apr 14
5
Philips Semiconductors
Product specification
CATV amplifier module
BGY785AD
Table 3
Bandwidth 40 to 550 MHz; V
B
= 24 V; T
case
= 30
°
C; Z
S
= Z
L
= 75
Notes
1.
f
p
= 55.25 MHz; V
p
= 44 dBmV;
f
q
= 493.25 MHz; V
q
= 44 dBmV;
measured at f
p
+ f
q
= 548.5 MHz.
Measured according to DIN45004B:
f
p
= 540.25 MHz; V
p
= V
o
;
f
q
= 547.25 MHz; V
q
= V
o
6 dB;
f
r
= 549.25 MHz; V
r
= V
o
6 dB;
measured at f
p
+ f
q
f
r
= 538.25 MHz.
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to 30 V.
2.
3.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 550 MHz
f = 40 to 550 MHz
f = 40 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 550 MHz
f = 50 MHz
77 channels flat;
V
o
= 44 dBmV;
measured at 547.25 MHz
77 channels flat;
V
o
= 44 dBmV;
measured at 55.25 MHz
77 channels flat;
V
o
= 44 dBmV;
measured at 548.5 MHz
note 1
d
im
=
60 dB; note 2
see Table 1
note 3
18
18.5
0.2
20
18.5
17
16
20
18.5
17
16
135
19
2
±
0.3
225
66
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
SL
FL
S
11
slope cable equivalent
flatness of frequency response
input return losses
S
22
output return losses
S
21
CTB
phase response
composite triple beat
X
mod
cross modulation
61
dB
CSO
composite second order distortion
62
dB
d
2
V
o
F
I
tot
second order distortion
output voltage
noise figure
total current consumption (DC)
64.5
72
265
dB
dBmV
dB
mA
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