參數(shù)資料
型號: BGY148B
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: HF amplifier modules
中文描述: 430 MHz - 488 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
文件頁數(shù): 2/12頁
文件大?。?/td> 84K
代理商: BGY148B
1998 May 13
2
Philips Semiconductors
Product specification
HF amplifier modules
BGY148A; BGY148B
FEATURES
Single 6 V nominal supply voltage
3 W output power
Easy control of output power by DC voltage
Silicon bipolar technology
Standby current less than 100
μ
A.
APPLICATIONS
Portable communication equipment operating in the
400 to 440 MHz and 430 to 488 MHz frequency ranges
respectively.
DESCRIPTION
The BGY148A and BGY148B are three-stage UHF
amplifier modules in a SOT421A package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate. The
modules produce an output power of 3 W into a load of
50
with an RF drive power of 10 mW.
PINNING - SOT421A
PIN
DESCRIPTION
1
2
3
4
RF input
V
C
V
S
RF output
ground
Flange
Fig.1 Simplified outline (SOT421A).
handbook, halfpage
MSA483
1
2
3
4
Top view
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1.
In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required.
It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes.
TYPE
MODE OF
OPERATION
f
(MHz)
V
S
(V)
P
L
(W)
3
3
G
p
(dB)
24.8
24.8
η
(%)
Z
S
; Z
L
(
)
50
50
BGY148A
BGY148B
CW
CW
400 to 440
430 to 488
6
6
typ. 53
typ. 53
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage
DC control voltage
input drive power
load power
storage temperature
operating mounting-base temperature; note1
40
30
8.5
4
20
3.5
+100
+100
V
V
mW
W
°
C
°
C
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