參數(shù)資料
型號: BGY122B
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: UHF amplifier modules
中文描述: 872 MHz - 905 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
封裝: SOT-388B, 4 PIN
文件頁數(shù): 2/16頁
文件大?。?/td> 97K
代理商: BGY122B
1998 May 11
2
Philips Semiconductors
Product specification
UHF amplifier modules
BGY122A; BGY122B
FEATURES
Single 4.8 V nominal supply voltage
1.2 W output power
Easy control of output power by DC voltage
Very high efficiency (typ. 55%)
Silicon bipolar technology
Standby current less than 100
μ
A.
APPLICATIONS
Hand-held transmitting equipment operating in the
824 to 849 MHz and 872 to 905 MHz frequency ranges.
DESCRIPTION
The BGY122A and BGY122B are three-stage UHF
amplifier modules in a SOT388B package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate.
The modules produce an output power of 1.2 W into a load
of 50
with an RF drive power of 2 mW.
PINNING - SOT388B
PIN
DESCRIPTION
1
2
3
4
RF input
V
C
V
S
RF output
ground
Flange
Fig.1 Simplified outline.
handbook, halfpage
1
2
3
4
Top view
MBK197
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C.
TYPE
MODE OF
OPERATION
f
(MHz)
V
S
(V)
P
L
(W)
G
p
(dB)
27.8
27.8
η
(%)
Z
S
; Z
L
(
)
50
50
BGY122A
BGY122B
CW
CW
824 to 849
872 to 905
4.8
4.8
1.2
1.2
typ. 55
typ. 55
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