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    參數(shù)資料
    型號: BGY120A
    廠商: NXP SEMICONDUCTORS
    元件分類: 衰減器
    英文描述: UHF amplifier modules
    中文描述: 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
    文件頁數(shù): 3/8頁
    文件大?。?/td> 45K
    代理商: BGY120A
    1997 Nov 11
    3
    Philips Semiconductors
    Objective specification
    UHF amplifier modules
    BGY120A; BGY120B
    LIMITING VALUES
    In accordance with the Absolute Maximum Rating System (IEC 134).
    CHARACTERISTICS
    Z
    S
    = Z
    L
    = 50
    ; P
    D
    = 5 mW; V
    S
    = 3.5 V; V
    C
    2.5 V; T
    mb
    = 25
    °
    C; unless otherwise specified.
    Note
    1.
    With respect to P
    int
    .
    SYMBOL
    PARAMETER
    MIN.
    MAX.
    UNIT
    V
    S
    V
    C
    P
    D
    P
    L
    T
    stg
    T
    mb
    DC supply voltage
    DC control voltage
    input drive power
    load power
    storage temperature
    operating mounting-base temperature
    40
    30
    5
    2.9
    10
    1.4
    +100
    +100
    V
    V
    mW
    W
    °
    C
    °
    C
    SYMBOL
    PARAMETER
    CONDITIONS
    MIN.
    TYP.
    MAX.
    UNIT
    f
    frequency range
    BGY120A
    BGY120B
    total leakage current
    control current
    load power
    824
    872
    1
    0.71
    23
    55
    60
    849
    905
    10
    10
    MHz
    MHz
    μ
    A
    mA
    W
    W
    dB
    %
    I
    Q
    I
    C
    P
    L
    V
    C
    = 0.3 V; P
    D
    <
    60 dBm
    V
    C
    = 2.5 V
    V
    S
    = 3.2 V; T
    mb
    = 85
    °
    C
    adjust V
    C
    for P
    L
    = 1 W
    V
    S
    = 3.2 V;
    adjust V
    C
    for P
    L
    = 0.9 W
    adjust V
    C
    for P
    L
    = 0.9 W
    adjust V
    C
    for P
    L
    = 0.9 W
    adjust V
    C
    for P
    L
    = 0.9 W
    V
    C
    0.5 V
    P
    L
    1.4 W; V
    C
    = 0 to 2.9 V;
    V
    S
    = 2.8 to 5 V; P
    D
    = 4 to 10 dBm;
    VSWR
    6 : 1 through all phases
    V
    C
    0.5 V
    adjust V
    C
    for P
    L
    = 1 W;
    bandwidth = 30 kHz;
    f
    n
    = f
    o
    + 45 MHz
    P
    Tx
    = 0.9 W; f
    int
    = f
    Tx
    45 MHz;
    P
    int
    = P
    Tx
    30 dB; note 1
    V
    S
    = 5 V;
    adjust V
    C
    for P
    L
    = 1.4 W;
    VSWR
    10 : 1 through all phases
    G
    p
    η
    power gain
    efficiency
    H
    2
    H
    3
    VSWR
    in
    second harmonic
    third harmonic
    input VSWR
    35
    40
    2 : 1
    4 : 1
    60
    dBc
    dBc
    stability
    dBc
    isolation
    noise power
    -40
    90
    dBm
    dBm
    P
    n
    d
    im
    reverse intermodulation
    8
    dB
    ruggedness
    no degradation
    相關(guān)PDF資料
    PDF描述
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    BGY120B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF amplifier modules
    BGY120D 制造商:未知廠家 制造商全稱:未知廠家 功能描述:RF Amplifier
    BGY122A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF amplifier modules
    BGY122AT/R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Analog IC
    BGY122B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:UHF amplifier modules