參數(shù)資料
型號: BGY115A
英文描述: SHF POWER MODULE
中文描述: 超高頻電源模塊
文件頁數(shù): 2/15頁
文件大?。?/td> 159K
代理商: BGY115A
1996 May 13
2
Philips Semiconductors
Product specification
UHF amplifier modules
BGY115A; BGY115B;
BGY115C/P; BGY115D
FEATURES
6 V nominal supply voltage1996 May 13
1.2 W output power (BGY115A, BGY115B and
BGY115D)
1.4 W output power (BGY115C/P)
Easy control of output power by DC voltage
SMD outline.
APPLICATIONS
Hand-held transmitting equipment operating in the
824 to 849 MHz, 872 to 905 MHz, 890 to 915 MHz and
902 to 928 MHz frequency ranges.
DESCRIPTION
The BGY115A, BGY115B, BGY115C/P and BGY115D are
three-stage UHF amplifier modules. Each module consists
of three NPN silicon planar transistor chips mounted
together with matching and bias circuit components on a
metallized ceramic substrate.
PINNING - SOT321A
PIN
DESCRIPTION
1
2
3
4
RF input
V
C
V
S
RF output
ground
Flange
Fig.1 Simplified outline.
1
2
3
4
MSA487
Top view
QUICK REFERENCE DATA
RF performance at T
mb
= 25
°
C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
TYPE NUMBER
MODE OF
OPERATION
f
(MHz)
V
S
(V)
P
L
(W)
G
p
(dB)
27.8
27.8
28.5
27.8
η
(%)
Z
S
; Z
L
(
)
50
50
50
50
BGY115A
BGY115B
BGY115C/P
BGY115D
CW
CW
CW
CW
824 to 849
872 to 905
890 to 915
902 to 928
6
6
6
6
1.2
1.2
1.4
1.2
typ. 50
typ. 50
typ. 50
typ. 50
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
S
DC supply voltage
BGY115A, BGY115B, BGY115D
BGY115C/P
DC control voltage
input drive power
load power
BGY115A, BGY115B, BGY115D
BGY115C/P
storage temperature
operating mounting base temperature
8.5
9
4
5
V
V
V
mW
V
C
P
D
P
L
40
30
1.6
1.8
+100
+100
W
W
°
C
°
C
T
stg
T
mb
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