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參數(shù)資料
| 型號(hào)： | BGR269 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 模擬信號(hào)調(diào)理 |
| 英文描述： | 200 MHz, 35 dB gain reverse amplifier |
| 封裝： | BGR269<SOT115J|<<<1<Always Pb-free,; |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 91K |
| 代理商： | BGR269 |
1. Product profile
1.1 General description
High performance amplifier in a SOT115J package, operating at a voltage supply of
24 V (DC).
1.2 Features and benefits
Excellent linearity
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
35 dB amplification up to 200 MHz
1.3 Applications
Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz
frequency range
1.4 Quick reference data
Table 1.
Symbol Parameter
G
p
power gain
[1]
The module normally operates at V
B
= 24 V, but is able to withstand supply transients up to V
B
= 35 V.
BGR269
200 MHz, 35 dB gain reverse amplifier
Rev. 6 — 5 August 2010
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
Quick reference data
Conditions
f = 5 MHz
f = 200 MHz
V
B
= 24 V
Min
34.5
35
Typ
35
-
160
Max
35.5
36
175
Unit
dB
dB
mA
I
tot
total current
[1]
145
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