參數(shù)資料
型號(hào): BGD508
廠商: NXP SEMICONDUCTORS
元件分類: 衰減器
英文描述: PV 12C 8#20 4#16 SKT RECP
中文描述: 40 MHz - 550 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
文件頁(yè)數(shù): 2/8頁(yè)
文件大小: 54K
代理商: BGD508
1998 Mar 16
2
Philips Semiconductors
Product specification
CATV amplifier module
BGD508
FEATURES
Excellent linearity
Extremely low noise
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid amplifier module for CATV systems in a SOT115J
package operating over a frequency range of
40 to 550 MHz at a voltage supply of 24 V (DC).
PINNING - SOT115J
PIN
DESCRIPTION
1
2
3
5
7
8
9
input
common
common
+V
B
common
common
output
Fig.1 Simplified outline.
handbook, halfpage
789
23
5
1
Side view
MSA319
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
G
p
power gain
f = 50 MHz
f = 550 MHz
V
B
= 24 V
35
36.5
37
625
dB
dB
mA
I
tot
total current consumption (DC)
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
V
i
T
stg
T
mb
RF input voltage
storage temperature
operating mounting base temperature
40
20
55
+100
+100
dBmV
°
C
°
C
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