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參數(shù)資料
| 型號(hào)： | BFY52 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | ECONOLINE: RM & RL - Single Output Rail- Industry Standard Pinout- 1kVDC & 2kVDC Isolation- High Efficiency for Low Power Applications- UL94V-0 Package Material- Toroidal Magnetics- Fully Encapsulated- Efficiency to 80% |
| 中文描述： | 1000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-39 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大?。?/td> | 55K |
| 代理商： | BFY52 |
1997 Apr 22
3
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CBO
collector-base voltage
BFY50
BFY51
BFY52
collector-emitter voltage
BFY50
BFY51
BFY52
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
open emitter
80
60
40
V
V
V
V
CEO
open base
65
65
35
30
20
6
1
1
100
800
5
2.86
+150
200
+150
V
V
V
V
A
A
mA
mW
W
W
°
C
°
C
°
C
V
EBO
I
C
I
CM
I
BM
P
tot
open collector
T
amb
≤
25
°
C
T
case
≤
25
°
C
25
°
C
<
T
case
< 100
°
C
T
stg
T
j
T
amb
storage temperature
junction temperature
operating ambient temperature
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-a
R
th j-c
thermal resistance from junction to ambient in free air
thermal resistance from junction to case
220
35
K/W
K/W
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFY50L | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
| BFY50 | MEDIUM POWER AMPLIFIER |
| BFY51 | MEDIUM POWER AMPLIFIER |
| BFY50 | Small Signal Transistors |
| BFY51 | Small Signal Transistors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFY52 | 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-5 |
| BFY53 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-5 |
| BFY55 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
| BFY56 | 制造商:NJS 功能描述: |
| BFY56A | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
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