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參數(shù)資料
| 型號(hào)： | BFY51 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | MEDIUM POWER AMPLIFIER |
| 中文描述： | 中功率功率放大器 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 55K |
| 代理商： | BFY51 |
1997 Apr 22
5
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
V
CEsat
collector-emitter saturation voltage
BFY50
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
200
200
700
1
mV
mV
mV
V
V
CEsat
collector-emitter saturation voltage
BFY51; BFY52
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 150 mA; I
B
= 15 mA
I
C
= 500 mA; I
B
= 50 mA
I
C
= 1 A; I
B
= 100 mA
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
I
C
= 50 mA; V
CE
= 10 V;
f = 100 MHz; T
amb
= 25
°
C
7
200
350
1
1.6
1.2
1.3
1.5
2
12
mV
mV
V
V
V
V
V
V
pF
V
BEsat
base-emitter saturation voltage
C
c
f
T
collector capacitance
transition frequency
BFY50
BFY51; BFY52
60
50
140
MHz
MHz
Switching times (between 10% and 90% levels)
t
on
t
d
t
r
t
off
t
s
t
f
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 150 mA; I
Bon
= 15 mA;
I
Boff
=
15 mA
55
15
40
360
300
60
ns
ns
ns
ns
ns
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFY50 | Small Signal Transistors |
| BFY51 | Small Signal Transistors |
| BFY52 | Small Signal Transistors |
| BFY50 | MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR |
| BFY90CSM | Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFY51 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| BFY52 | 制造商:TT Electronics/ Semelab 功能描述:TRANSISTOR NPN TO-5 制造商:TT Electronics / Semelab 功能描述:NPN transistor,BFY52 1A Ic 10Vce |
| BFY52 | 制造商:UNBRANDED 功能描述:TRANSISTOR NPN TO-5 |
| BFY53 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 1A I(C) | TO-5 |
| BFY55 | 制造商:CENTRAL 制造商全稱:Central Semiconductor Corp 功能描述:Small Signal Transistors |
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