- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄373019 > BFY50 (意法半導體) MEDIUM POWER AMPLIFIER PDF資料下載
參數(shù)資料
| 型號： | BFY50 |
| 廠商： | 意法半導體 |
| 英文描述： | MEDIUM POWER AMPLIFIER |
| 中文描述： | 中功率功率放大器 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 55K |
| 代理商： | BFY50 |
1997 Apr 22
4
Philips Semiconductors
Product specification
NPN medium power transistors
BFY50; BFY51; BFY52
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CBO
collector cut-off current
BFY50
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 80 V
I
E
= 0; V
CB
= 80 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY51
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 60 V
I
E
= 0; V
CB
= 60 V; T
j
= 100
°
C
50
2.5
500
30
nA
μ
A
nA
μ
A
I
CBO
collector cut-off current
BFY52
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 100
°
C
I
E
= 0; V
CB
= 40 V
I
E
= 0; V
CB
= 40 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 5 V
I
C
= 0; V
EB
= 5 V; T
j
= 100
°
C
I
C
= 0; V
EB
= 6 V
50
2.5
500
30
50
2.5
500
nA
μ
A
nA
μ
A
nA
μ
A
nA
I
EBO
emitter cut-off current
h
FE
DC current gain
BFY50
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
20
30
20
15
h
FE
DC current gain
BFY51
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
40
25
15
h
FE
DC current gain
BFY52
I
C
= 10 mA; V
CE
= 10 V
I
C
= 150 mA; V
CE
= 10 V
I
C
= 500 mA; V
CE
= 10 V
I
C
= 1 A; V
CE
= 10 V
30
60
30
15
相關PDF資料 |
PDF描述 |
|---|---|
| BFY51 | MEDIUM POWER AMPLIFIER |
| BFY50 | Small Signal Transistors |
| BFY51 | Small Signal Transistors |
| BFY52 | Small Signal Transistors |
| BFY50 | MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BFY50 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
| BFY50_02 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:MEDIUM POWER AMPLIFIERS NPN SILICON PLANAR TRANSISTOR |
| BFY50L | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN |
| BFY51 | 功能描述:兩極晶體管 - BJT NPN General Purpose RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BFY51 | 制造商:STMicroelectronics 功能描述:TRANSISTOR NPN TO-5 |
發(fā)布緊急采購，3分鐘左右您將得到回復。