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參數(shù)資料
| 型號(hào)： | BFY193P |
| 元件分類(lèi)： | 開(kāi)關(guān) |
| 英文描述： | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 525K |
| 代理商： | BFY193P |
A-78
APEM
www.apem.com
12000X778 series
High performance toggle switches - threaded bushing 11,9 (15/32)
Distinctive features
A
K
Approval and lists
CECC 96201-005
CECC 96201-008
MUAHAG and QPL listed (Europe only)
French defence approved : DAT list No A5999 X001.
This range of professional toggle switches is suitable for use in military and
other high specification environments.
K
Contacts
Highly reliable contacts suitable for low level applications (10mA 50mV -
10A 5VDC min.) or power applications (2A 250VAC - 4A 125VAC -
4A 30VDC max.)
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Pinned lever
The base of the switch lever is pinned to the bushing, thus earthing the lever to
the bushing. This also provides strain relief to protect the switch if accidentally
knocked.
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Double shell case
For high mechanical strength and high electrical insulation.
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Compact size
The small rear end of the switch allows space saving behind the panel.
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Finish
Matt black finish on body, bushing, lever and hardware.
K
Sealing
Panel sealed to IP 67, these switches are frontal sealed by two O-rings and
have full rear end sealing.
K
Accessories
A comprehensive range of protection boots (both full and half length), locking
levers and security caps are available.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFY193S | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196 | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196H | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196P | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
| BFY196S | TOGGLE SWITCH, DP3T, MOMENTARY, 4A, 28VDC, PANEL MOUNT-THREADED |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFY193PZZZA1 | 功能描述:RF Transistor NPN 12V 80mA 7.5GHz 580mW Surface Mount MICRO-X1 制造商:infineon technologies 系列:- 包裝:散裝 零件狀態(tài):過(guò)期 晶體管類(lèi)型:NPN 電壓 - 集射極擊穿（最大值）:12V 頻率 - 躍遷:7.5GHz 噪聲系數(shù)（dB，不同 f 時(shí)的典型值）:2.3dB ~ 2.9dB @ 2GHz 增益:12.5dB ~ 13.5dB 功率 - 最大值:580mW 不同?Ic，Vce?時(shí)的 DC 電流增益（hFE）（最小值）:50 @ 30mA，8V 電流 - 集電極（Ic）（最大值）:80mA 安裝類(lèi)型:表面貼裝 封裝/外殼:MICRO-X1 供應(yīng)商器件封裝:MICRO-X1 標(biāo)準(zhǔn)包裝:1 |
| BFY193S | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
| BFY193SAMNZ | 功能描述:射頻雙極小信號(hào)晶體管 RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFY196 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
| BFY196_11 | 制造商:INFINEON 制造商全稱(chēng):Infineon Technologies AG 功能描述:HiRel NPN Silicon RF Transistor |
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