參數(shù)資料
型號(hào): BFU790F
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN wideband silicon germanium RF transistor
封裝: BFU790F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,;
文件頁數(shù): 2/12頁
文件大?。?/td> 121K
代理商: BFU790F
BFU790F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 April 2011
2 of 12
NXP Semiconductors
BFU790F
NPN wideband silicon germanium RF transistor
1.4 Quick reference data
Table 1.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
[1]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
[2]
2. Pinning information
Table 2.
Pin
1
2
3
4
3. Ordering information
Table 3.
Type number
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Typ
-
-
-
50
-
410
Max
10
2.8
1.0
100
234
585
Unit
V
V
V
mA
mW
T
sp
90
°
C
I
C
= 10 mA; V
CE
= 2 V;
T
j
= 25
°
C
V
CB
= 2 V; f = 1 MHz
[1]
-
235
C
CBS
collector-base
capacitance
transition frequency
-
514
-
fF
f
T
I
C
= 100 mA; V
CE
= 1 V;
f = 2 GHz; T
amb
= 25
°
C
I
C
= 30 mA; V
CE
= 2.5 V;
f = 1.8 GHz; T
amb
= 25
°
C
I
C
= 85 mA; V
CE
= 1 V;
f = 1.8 GHz; T
amb
= 25
°
C
I
C
= 20 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
; f = 1.8 GHz;
T
amb
= 25
°
C
I
C
= 60 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
;
f = 1.8 GHz; T
amb
= 25
°
C
-
25
-
GHz
IP3
O
output third-order
intercept point
maximum power gain
-
33
-
dBm
G
p(max)
[2]
-
19.5
-
dB
NF
noise figure
-
0.40
-
dB
P
L(1dB)
output power at 1 dB
gain compression
-
20
-
dBm
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline
Graphic symbol
1
2
3
4
mbb159
4
1, 3
2
Ordering information
Package
Name
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU790F
相關(guān)PDF資料
PDF描述
BFU790F NPN wideband silicon germanium RF transistor
BFU790F NPN wideband silicon germanium RF transistor
BFU790F NPN wideband silicon germanium RF transistor
BFU790F NPN wideband silicon germanium RF transistor
BLT50 UHF power transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BFU790F,115 功能描述:射頻硅鍺晶體管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel
BFU790F,115-CUT TAPE 制造商:NXP 功能描述:BFU790 Series 2.8 V 19.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4
BFU790F115 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
BF-U811 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SINGLE DIGIT LED DISPLAYS
BF-U811RD 制造商:未知廠家 制造商全稱:未知廠家 功能描述:SINGLE DIGIT LED DISPLAYS