參數(shù)資料
型號(hào): BFU760F
廠商: NXP Semiconductors N.V.
元件分類(lèi): 晶體管
英文描述: NPN wideband silicon germanium RF transistor
封裝: BFU760F<SOT343F (DFP4)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,;
文件頁(yè)數(shù): 1/12頁(yè)
文件大?。?/td> 122K
代理商: BFU760F
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high linearity RF transistor
High maximum output third-order intercept point 32 dBm at 1.8 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
Ka band oscillators DRO’s
High linearity applications
Medium output power applications
Wi-Fi / WLAN / WiMAX
GPS
ZigBee
SDARS first stage LNA
LTE, cellular, UMTS
BFU760F
NPN wideband silicon germanium RF transistor
Rev. 1 — 29 April 2011
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
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