參數(shù)資料
型號: BFU760F
廠商: NXP Semiconductors N.V.
元件分類: 晶體管
英文描述: NPN wideband silicon germanium RF transistor
封裝: BFU760F<SOT343F (DFP4)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,;
文件頁數(shù): 5/12頁
文件大?。?/td> 122K
代理商: BFU760F
BFU760F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
5 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
IP3
third-order intercept point
I
C
= 30 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
-
-
-
-
32
32
32
33
-
-
-
-
dBm
dBm
dBm
dBm
Table 7.
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min Typ
Max Unit
T
amb
= 25
°
C.
(1) I
B
= 180
μ
A
(2) I
B
= 160
μ
A
(3) I
B
= 140
μ
A
(4) I
B
= 120
μ
A
(5) I
B
= 100
μ
A
(6) I
B
= 80
μ
A
(7) I
B
= 60
μ
A
(8) I
B
= 40
μ
A
(9) I
B
= 20
μ
A
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
V
CE
= 2 V; T
amb
= 25
°
C.
Fig 3.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
3
2
1
001aam863
20
40
60
I
C
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
001aam864
I
C
(mA)
0
60
40
20
200
300
100
400
500
h
FE
0
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BFU760F NPN wideband silicon germanium RF transistor
BFU760F NPN wideband silicon germanium RF transistor
BFU760F NPN wideband silicon germanium RF transistor
BFU760F NPN wideband silicon germanium RF transistor
BFU760F NPN wideband silicon germanium RF transistor
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