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參數(shù)資料
| 型號(hào)： | BFU760F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類(lèi)： | 晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封裝： | BFU760F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 122K |
| 代理商： | BFU760F |
BFU760F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
3 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
4. Marking
Table 4.
Type number
BFU760F
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CEO
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the solder point of the emitter lead.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
Marking
Marking
D7*
Description
* = p : made in Hong Kong
* = t : made in Malaysia
* = w : made in China
Limiting values
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Max
10
2.8
1.0
70
220
+150
150
Unit
V
V
V
mA
mW
°
C
°
C
T
sp
≤
90
°
C
[1]
-
65
-
Thermal characteristics
Parameter
thermal resistance from junction to solder point
Conditions
Typ
270
Unit
K/W
Fig 1.
Power derating curve
T
sp
(
°
C)
0
160
120
40
80
001aam862
100
150
50
200
250
P
tot
(mW)
0
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