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參數(shù)資料
| 型號(hào)： | BFU760F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 中文描述： | KA BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, FLATPAK-4 |
| 文件頁數(shù)： | 7/12頁 |
| 文件大?。?/td> | 122K |
| 代理商： | BFU760F |
BFU760F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
7 of 12
NXP Semiconductors
BFU760F
NPN wideband silicon germanium RF transistor
V
CE
= 1 V; I
C
= 8 mA; T
amb
= 25
°
C.
Gain as a function of frequency; typical values
V
CE
= 1 V; I
C
= 50 mA; T
amb
= 25
°
C.
Gain as a function of frequency; typical values
Fig 7.
Fig 8.
V
CE
= 2 V; T
amb
= 25
°
C.
(1) f = 5.8 GHz
(2) f = 2.4 GHz
(3) f = 1.8 GHz
(1) f = 1.5 GHz
I
C
= 12 mA; V
CE
= 2 V; T
amb
= 25
°
C.
Fig 9.
Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0
10
8
4
6
2
001aam868
20
10
30
40
G
(dB)
0
MSG
G
p(max)
IS21I
2
f (GHz)
0
10
8
4
6
2
001aam869
20
10
30
40
G
(dB)
0
MSG
G
p(max)
IS21I
2
001aam870
I
C
(mA)
0
30
20
10
0.4
0.8
1.2
NF
min
(dB)
0
(1)
(2)
(4)
(3)
f (GHz)
0
10
8
4
6
2
001aam871
0.4
0.6
0.2
0.8
1.0
NF
min
(dB)
0
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| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
| BFU760F | NPN wideband silicon germanium RF transistor |
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| BFU760F,115 | 功能描述:射頻硅鍺晶體管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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| BFU790F,115 | 功能描述:射頻硅鍺晶體管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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