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參數(shù)資料
| 型號： | BFU730F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封裝： | BFU730F<SOT343F (DFP4)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 128K |
| 代理商： | BFU730F |
BFU730F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 29 April 2011
5 of 12
NXP Semiconductors
BFU730F
NPN wideband silicon germanium RF transistor
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
P
L(1dB)
output power at 1 dB gain compression
I
C
= 15 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
I
C
= 20 mA; V
CE
= 2.5 V;
Z
S
= Z
L
= 50
Ω
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
-
-
-
-
12.5
12
11.5
12.5
-
-
-
-
dBm
dBm
dBm
dBm
IP3
third-order intercept point
-
-
-
-
26.5
26.5
26.5
29
-
-
-
-
dBm
dBm
dBm
dBm
Table 7.
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
Characteristics
…continued
Conditions
Min Typ
Max Unit
T
amb
= 25
°
C.
(1) I
B
= 100
μ
A
(2) I
B
= 90
μ
A
(3) I
B
= 80
μ
A
(4) I
B
= 70
μ
A
(5) I
B
= 60
μ
A
(6) I
B
= 50
μ
A
(7) I
B
= 40
μ
A
(8) I
B
= 30
μ
A
(9) I
B
= 20
μ
A
(10) I
B
= 10
μ
A
Fig 2.
Collector current as a function of
collector-emitter voltage; typical values
V
CE
= 2 V; T
amb
= 25
°
C.
Fig 3.
DC current gain as a function of collector
current; typical values
V
CE
(V)
0
3
2
1
001aam853
10
20
30
I
C
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
001aam854
I
C
(mA)
0
30
20
10
200
300
100
400
500
h
FE
0
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