- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378417 > BFU725F (NXP Semiconductors N.V.) NPN wideband silicon germanium RF transistor PDF資料下載
參數(shù)資料
| 型號： | BFU725F |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封裝： | BFU725F/N1<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 136K |
| 代理商： | BFU725F |
BFU725F_N1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 3 November 2011
4 of 12
NXP Semiconductors
BFU725F/N1
NPN wideband silicon germanium RF transistor
7. Characteristics
Table 7.
T
j
= 25
C unless otherwise specified.
Symbol
Parameter
V
(BR)CBO
collector-base breakdown
voltage
V
(BR)CEO
collector-emitter breakdown
voltage
I
C
collector current
I
CBO
collector-base cut-off current
h
FE
DC current gain
C
CES
collector-emitter capacitance
C
EBS
emitter-base capacitance
C
CBS
collector-base capacitance
f
T
transition frequency
G
p(max)
maximum power gain
Characteristics
Conditions
I
C
= 2.5
A; I
E
= 0 mA
Min Typ
10
Max Unit
-
-
V
I
C
= 1 mA; I
B
= 0 mA
2.8
-
-
V
-
-
160 280
-
-
-
-
25
-
40
100
400
-
-
-
-
mA
nA
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 25 mA; V
CE
= 2 V; f = 2 GHz; T
amb
= 25
C
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I
C
= 25 mA; V
CE
= 2 V; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I
C
= 5 mA; V
CE
= 2 V;
S
=
opt
; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
I
C
= 5 mA; V
CE
= 2 V;
S
=
opt
; T
amb
= 25
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
f = 12 GHz
268
400
70
55
fF
fF
fF
GHz
[1]
-
-
-
-
-
28
27
25.5 -
18
13
-
-
dB
dB
dB
dB
dB
-
-
s
21
2
insertion power gain
-
-
-
-
-
26.7 -
25.4 -
23
16
9.3
dB
dB
dB
dB
dB
-
-
-
NF
noise figure
-
-
-
-
-
0.42 -
0.43 -
0.47 -
0.7
1.1
dB
dB
dB
dB
dB
-
-
G
ass
associated gain
-
-
-
-
-
24
22
20
13.5 -
10
-
-
-
dB
dB
dB
dB
dB
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFU725F | NPN wideband silicon germanium RF transistor |
| BFU725F | NPN wideband silicon germanium RF transistor |
| BFU725F | NPN wideband silicon germanium RF transistor |
| BFU730F | NPN wideband silicon germanium RF transistor |
| BFU730F | NPN wideband silicon germanium RF transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFU725F,115 | 功能描述:射頻雙極小信號晶體管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFU725F/N1 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU725F/N1,115 | 功能描述:射頻雙極小信號晶體管 2.8V 0.04A 4-Pin Trans GP BJT NPN RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFU725F/N1,115-CUT TAPE | 制造商:NXP 功能描述:BFU725 Series 2.8 V 18 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4 |
| BFU725F_11 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。