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參數(shù)資料
| 型號(hào)： | BFU710F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 中文描述： | KA BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, FLATPAK-4 |
| 文件頁(yè)數(shù)： | 1/12頁(yè) |
| 文件大小： | 126K |
| 代理商： | BFU710F |
1. Product profile
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a
plastic, 4-pin dual-emitter SOT343F package.
1.2 Features and benefits
Low noise high gain microwave transistor
Noise figure (NF) = 1.45 dB at 12 GHz
High maximum power gain 14 dB at 12 GHz
110 GHz f
T
silicon germanium technology
1.3 Applications
2nd LNA stage and mixer stage in DBS LNB’s
Low noise amplifiers for microwave communications systems
Ka band oscillators DRO’s
Low current battery equipped applications
Microwave driver / buffer applications
GPS
RKE
AMR
ZigBee
FM radio
Mobile TV
Bluetooth
BFU710F
NPN wideband silicon germanium RF transistor
Rev. 1 — 20 April 2011
Product data sheet
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the
ANSI/ESD S20.20
,
IEC/ST 61340-5
,
JESD625-A
or
equivalent standards.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
| BFU710F | NPN wideband silicon germanium RF transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFU710F,115 | 功能描述:射頻硅鍺晶體管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
| BFU710F,115-CUT TAPE | 制造商:NXP 功能描述:BFU710 Series 5.5 V 14 dB Gain NPN Silicon Germanium RF Transistor - SOT-343F-4 |
| BFU710F115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BFU725F | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:NPN wideband silicon germanium RF transistor |
| BFU725F,115 | 功能描述:射頻雙極小信號(hào)晶體管 RF NPN Transistor RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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