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參數(shù)資料
| 型號： | BFU690F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN wideband silicon RF transistor |
| 中文描述： | KA BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, FLAT PACK-4 |
| 文件頁數(shù)： | 2/12頁 |
| 文件大小： | 107K |
| 代理商： | BFU690F |
BFU690F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 16 December 2010
2 of 12
NXP Semiconductors
BFU690F
NPN wideband silicon RF transistor
1.4 Quick reference data
Table 1.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
tot
h
FE
[1]
T
sp
is the temperature at the solder point of the emitter lead.
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= Maximum Stable Gain (MSG).
[2]
2. Pinning information
Table 2.
Pin
1
2
3
4
3. Ordering information
Table 3.
Type number
Quick reference data
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
total power dissipation
DC current gain
Conditions
open emitter
open base
open collector
Min
-
-
-
-
Typ
-
-
-
70
-
135
Max
16
5.5
2.5
100
230
180
Unit
V
V
V
mA
mW
T
sp
90
C
I
C
= 20 mA; V
CE
= 2 V;
T
j
= 25
C
V
CB
= 2 V; f = 1 MHz
[1]
-
90
C
CBS
collector-base
capacitance
transition frequency
-
404
-
fF
f
T
I
C
= 60 mA; V
CE
= 1 V;
f = 2 GHz; T
amb
= 25
C
I
C
= 60 mA; V
CE
= 1 V;
f = 1.8 GHz; T
amb
= 25
C
I
C
= 15 mA; V
CE
= 2 V;
f = 1.8 GHz;
S
=
opt
I
C
= 70 mA; V
CE
= 4 V;
Z
S
= Z
L
= 50
;
f = 1.8 GHz; T
amb
= 25
C
-
18
-
GHz
G
p(max)
maximum power gain
[2]
-
20.5
-
dB
NF
noise figure
-
0.65
-
dB
P
L(1dB)
output power at 1 dB
gain compression
-
22
-
dBm
Discrete pinning
Description
emitter
base
emitter
collector
Simplified outline
Graphic symbol
1
2
3
4
mbb159
4
1, 3
2
Ordering information
Package
Name
-
Description
plastic surface-mounted flat pack package; reverse
pinning; 4 leads
Version
SOT343F
BFU690F
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| BFU690F,115 | 功能描述:射頻雙極小信號晶體管 Single NPN 18GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFU690F115 | 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
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| BFU710F,115 | 功能描述:射頻硅鍺晶體管 NPN WIDEBAND SILICON GERMANIUM RF TRANS RoHS:否 制造商:Infineon Technologies 發(fā)射極 - 基極電壓 VEBO: 集電極連續(xù)電流: 功率耗散: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Reel |
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