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參數(shù)資料
| 型號(hào)： | BFT93W |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | PNP 4 GHz wideband transistor |
| 封裝： | BFT93W<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件頁數(shù)： | 3/22頁 |
| 文件大?。?/td> | 1099K |
| 代理商： | BFT93W |
March 1994
3
NXP Semiconductors
Product specification
PNP 4 GHz wideband transistor
BFT93W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note to the “Limiting values” and “Thermal characteristics”
1.
T
s
is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
T
j
= 25
C (unless otherwise specified).
Note
1.
G
UM
is the maximum unilateral power gain, assuming s
12
is zero.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
15
12
2
50
300
+150
150
UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
open emitter
open base
open collector
65
V
V
V
mA
mW
C
C
up to T
s
= 93
C; note 1
SYMBOL
PARAMETER
CONDITIONS
up to T
s
= 93
C; note 1
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
190
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
50
UNIT
I
CBO
h
FE
f
T
collector cut-off current
DC current gain
transition frequency
I
E
= 0; V
CB
=
5 V
I
C
=
30 mA; V
CE
=
5 V
I
C
=
30 mA; V
CE
=
5 V;
f = 500 MHz; T
amb
= 25
C
I
E
= i
e
= 0; V
CB
=
5 V;
f = 1 MHz
I
C
= i
c
= 0; V
EB
=
0.5 V;
f = 1 MHz
I
C
= 0; V
CE
=
5 V;
f = 1 MHz
I
C
=
30 mA; V
CE
=
5 V;
f = 500 MHz; T
amb
= 25
C
I
C
=
30 mA; V
CE
=
5 V;
f = 1 GHz; T
amb
= 25
C
s
=
opt
; I
C
=
10 mA;
V
CE
=
5 V; f = 500 MHz
s
=
opt
; I
C
=
10 mA;
V
CE
=
5 V; f = 1 GHz
50
4
nA
GHz
C
c
collector capacitance
1.2
pF
C
e
emitter capacitance
1.4
pF
C
re
feedback capacitance
1
pF
G
UM
maximum unilateral power
gain; note 1
15.5
dB
10
dB
F
noise figure
2.4
dB
3
dB
G
UM
10
s
1
1
s
112
–
s
222
–
--------------------------------------------------------dB.
log
=
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