參數(shù)資料
型號: BFT93
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: PNP 5 GHz wideband transistor
封裝: BFT93<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁數(shù): 2/10頁
文件大?。?/td> 193K
代理商: BFT93
November 1992
2
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT93
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR93 and
BFR93A.
PINNING
PIN
DESCRIPTION
Code: X1p
base
emitter
collector
1
2
3
Fig.1 SOT23.
lfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
5
MAX.
15
12
35
300
UNIT
V
CBO
V
CEO
I
c
P
tot
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
open emitter
open base
V
V
mA
mW
GHz
up to T
s
= 95
C; note 1
I
C
=
30 mA; V
CE
=
5 V; f = 500 MHz;
T
j
= 25
C
I
C
=
2 mA; V
CE
=
5 V; f = 1 MHz
I
C
=
30 mA; V
CE
=
5 V; f = 500 MHz;
T
amb
= 25
C
I
C
=
10 mA; V
CE
=
5 V; f = 500 MHz;
T
amb
= 25
C
d
im
=
60 dB; I
C
=
30 mA;
V
CE
=
5 V; R
L
= 75
;
f
(p
q
r)
= 493.25 MHz
C
re
G
UM
feedback capacitance
maximum unilateral power gain
1
16.5
pF
dB
F
noise figure
2.4
dB
V
o
output voltage
300
mV
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