參數(shù)資料
型號: BFT92
廠商: NXP Semiconductors N.V.
元件分類: 新型場效應(yīng)晶體管
英文描述: PNP 5 GHz wideband transistor
封裝: BFT92<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件頁數(shù): 2/10頁
文件大小: 192K
代理商: BFT92
November 1992
2
NXP Semiconductors
Product specification
PNP 5 GHz wideband transistor
BFT92
DESCRIPTION
PNP transistor in a plastic SOT23
envelope.
It is primarily intended for use in RF
wideband amplifiers, such as in aerial
amplifiers, radar systems,
oscilloscopes, spectrum analyzers,
etc. The transistor features low
intermodulation distortion and high
power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
NPN complements are BFR92 and
BFR92A.
PINNING
PIN
DESCRIPTION
Code: W1p
base
emitter
collector
1
2
3
Fig.1 SOT23.
lfpage
MSB003
Top view
1
2
3
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
TYP.
5
0.7
18
MAX.
20
15
25
300
UNIT
V
CBO
V
CEO
I
C
P
tot
f
T
C
re
G
UM
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
feedback capacitance
maximum unilateral power gain
open emitter
open base
V
V
mA
mW
GHz
pF
dB
up to T
s
= 95
C; note 1
I
C
=
14 mA; V
CE
=
10 V; f = 500 MHz
I
C
=
2 mA; V
CE
=
10 V; f = 1 MHz
I
C
=
14 mA; V
CE
=
10 V;
f = 500 MHz; T
amb
= 25
C
I
C
=
5 mA; V
CE
=
10 V; f = 500 MHz;
T
amb
= 25
C
I
C
=
14 mA; V
CE
=
10 V; R
L
= 75
;
V
o
= 150 mV; T
amb
= 25
C;
f
(p
q-r)
= 493.25 MHz
F
noise figure
2.5
dB
d
im
intermodulation distortion
60
dB
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