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參數(shù)資料
| 型號： | BFS540 |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封裝： | BFS540<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<week 30, 2003,; |
| 文件頁數(shù)： | 2/13頁 |
| 文件大小： | 273K |
| 代理商： | BFS540 |
2000 May 30
2
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFS540
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability
SOT323 package.
APPLICATIONS
RF wideband amplifier applications
such as satellite TV systems and RF
portable communication equipment
with signal frequencies up to 2 GHz.
DESCRIPTION
NPN transistor in a SOT323 plastic
package.
PINNING
PIN
DESCRIPTION
1
2
3
base
emitter
collector
Fig.1 SOT323.
handbook, 2 columns
3
1
2
MBC870
Top view
Marking code:
N4.
QUICK REFERENCE DATA
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
Note
1.
T
s
is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
100
TYP.
120
9
MAX.
UNIT
V
CBO
V
CEO
I
C
P
tot
h
FE
f
T
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
DC current gain
transition frequency
open emitter
open base
20
15
120
500
250
V
V
mA
mW
T
s
80
C; note 1
I
C
= 40 mA; V
CE
= 8 V; T
j
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 1 GHz;
T
amb
= 25
C
I
C
= 40 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
I
C
= 10 mA; V
CE
= 8 V; f = 900 MHz;
T
amb
= 25
C
GHz
G
UM
maximum unilateral power gain
14
dB
F
noise figure
1.3
1.7
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
65
MAX.
UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
open emitter
R
BE
= 0
open collector
20
15
2.5
120
500
150
175
V
V
V
mA
mW
C
C
T
s
80
C; note 1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BFS540 T/R | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFS540,115 | 功能描述:射頻雙極小信號晶體管 TAPE-7 TNS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
| BFS540_00 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:NPN 9 GHz wideband transistor |
| BFS540115 | 制造商:NXP Semiconductors 功能描述:RF WIDEBAND TRANSISTOR NPN 15V 9GHZ |
| BFS540-115 (N4) | 制造商:NXP Semiconductors 功能描述:Bulk |
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