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參數(shù)資料
| 型號： | BFR94AW |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 晶體管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封裝： | BFR94AW<SOT323 (SC-70)|<<http://www.nxp.com/packages/SOT323.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/15頁 |
| 文件大小： | 298K |
| 代理商： | BFR94AW |
BFR94AW
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 1 — 29 October 2010
3 of 15
NXP Semiconductors
BFR94AW
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
T
sp
is the temperature at the solder point of the collector pin.
7. Characteristics
[1]
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
Conditions
T
sp
≤
93
°
C
Typ
Unit
K/W
[1]
190
Table 7.
Symbol
I
CBO
h
FE
C
c
C
e
C
re
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
emitter capacitance
feedback capacitance
Conditions
I
E
= 0 A; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V
I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz
I
C
= i
c
= 0 A; V
EB
= 0.5 V; f = 1 MHz
I
C
= 0 mA; V
CE
= 10 V; f = 1 MHz;
T
amb
= 25
°
C
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
°
C
f = 1 GHz
f = 2 GHz
I
C
= 5 mA; V
CE
= 10 V;
Γ
S
=
Γ
opt
f = 1 GHz
f = 2 GHz
Min
-
65
-
-
-
Typ
-
90
0.6
0.9
0.35
Max
50
135
-
-
-
Unit
nA
pF
pF
pF
f
T
G
UM
transition frequency
unilateral power gain
3.5
5
-
GHz
[1]
-
-
14
8
-
-
dB
dB
NF
noise figure
-
-
2
3
-
-
dB
dB
G
UM
10
S
)
1
2
1
S
11
S
22
2
)
–
(
–
(
--------------------------------------------------------
dB
.
log
=
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| BFR94AW,115 | 功能描述:射頻雙極小信號晶體管 Single NPN 5GHz RoHS:否 制造商:NXP Semiconductors 配置:Single 晶體管極性:NPN 最大工作頻率:7000 MHz 集電極—發(fā)射極最大電壓 VCEO:15 V 發(fā)射極 - 基極電壓 VEBO:2 V 集電極連續(xù)電流:0.15 A 功率耗散:1000 mW 直流集電極/Base Gain hfe Min: 最大工作溫度:+ 150 C 封裝 / 箱體:SOT-223 封裝:Reel |
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| BFR96S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 100MA I(C) | SOT-37 |
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