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參數(shù)資料
| 型號： | BFR94A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN 5 GHz wideband transistor |
| 封裝： | BFR94A<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<Always Pb-free,; |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 305K |
| 代理商： | BFR94A |
BFR94A
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 3 — 15 November 2010
3 of 14
NXP Semiconductors
BFR94A
NPN 5 GHz wideband transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
T
sp
is the temperature at the solder point of the collector pin.
7. Characteristics
[1]
G
UM
is the maximum unilateral power gain, assuming S
12
is zero and
[2]
Measured on the same crystal in a SOT37 package (BFR90A).
[3]
IMD =
60 dB (DIN 45004B); I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
Ω
; VSWR < 2; T
amb
= 25
°
C;
V
p
= V
O
at IMD =
60 dB; f
p
= 795.25 MHz;
V
q
= V
O
6 dB at f
q
= 803.25 MHz;
V
r
= V
O
6 dB at f
r
= 805.25 MHz;
measured at f
p
+ f
q
f
r
= 793.25 MHz
I
C
= 14 mA; V
CE
= 10 V; R
L
= 75
Ω
; VSWR < 2; T
amb
= 25
°
C;
V
p
= 60 mV at f
p
= 250 MHz;
V
q
= 60 mV at f
p
= 560 MHz;
measured at f
p
+ f
q
= 810 MHz
[4]
Thermal characteristics
Parameter
thermal resistance from junction to
solder point
Conditions
T
sp
≤
95
°
C
Typ
Unit
K/W
[1]
260
Table 7.
Symbol
I
CBO
h
FE
C
c
Characteristics
Parameter
collector-base cut-off current
DC current gain
collector capacitance
Conditions
I
E
= 0 A; V
CB
= 10 V
I
C
= 15 mA; V
CE
= 10 V; see
Figure 3
I
E
= i
e
= 0 A; V
CB
= 10 V; f = 1 MHz:
see
Figure 4
I
C
= i
c
= 0 A; V
EB
= 10 V; f = 1 MHz
I
C
= i
c
= 0 mA; V
CE
= 10 V; f = 1 MHz
I
C
= 15 mA; V
CE
= 10 V; f = 500 MHz;
see
Figure 5
I
C
= 15 mA; V
CE
= 10 V; T
amb
= 25
°
C
f = 1 GHz
f = 2 GHz
I
C
= 5 mA; V
CE
= 10 V;
Γ
S
=
Γ
opt
;
T
amb
= 25
°
C;
see
Figure 12
and
Figure 13
f = 1 GHz
f = 2 GHz
Min
-
65
-
Typ
-
90
0.6
Max
50
135
-
Unit
nA
pF
C
e
C
re
f
T
emitter capacitance
feedback capacitance
transition frequency
-
-
-
1.2
0.35
5
-
-
-
pF
pF
GHz
G
UM
unilateral power gain
[1]
-
-
14
8
-
-
dB
dB
NF
noise figure
-
-
2.1
3
150
50
-
-
-
-
dB
dB
mV
dB
V
O
IMD2
output voltage
second-order intermodulation
distortion
[2][3]
-
see
Figure 15
[2][4]
-
G
UM
10
S
)
1
2
1
S
11
S
22
2
)
–
(
–
(
--------------------------------------------------------
dB
.
log
=
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